View SGB15N60HS_371207.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGB15N60HS
^
High Speed IGBT in NPT-technology
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * High ruggedness, temperature stable behaviour Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 15A Eoff 200J Tj 150C Marking G15N60HS Package P-TO-263-3-2 Ordering Code Q67040-S4535
G C
E
P-TO-263-3-2 (D-PAK) (TO-263AB)
Type SGB15N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
Symbol VCE IC
Value 600 27 15
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1)
ICpuls VGE tSC Ptot Tj ,Tstg Tj(tl) -
60 60 20 30 10 138 -55...+150 175 220 V s W C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev 2.1 Jan 05
Power Semiconductors
SGB15N60HS
^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB1) RthJA 40 RthJA 62 RthJC 0.9 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 50 0A VCE(sat) V G E = 15V, I C = 15A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0A, V C E =V G E V C E = 600V ,V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 15A 10 40 2000 100 nA S 3 2.8 3.5 4 3.15 4.00 5 A 600 V Symbol Conditions Value min. Typ. max. Unit
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) V G E = 1 5V,t S C 10s V C C 400V, T j 150 C 135 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 15A V G E = 1 5V 7 nH 810 83 51 80 nC pF
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev 2.1
Jan 05
SGB15N60HS
^ Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 15A, V G E = 0/ 1 5V , R G = 2 3 1) L = 60nH, C 1 ) = 40pF Energy losses include "tail" and diode reverse recovery. 13 14 209 15 0.32 0.21 0.53 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 4 00V, I C = 15A, V G E = 0/ 1 5V , R G = 3. 6 L 1 ) = 60nH, C 1 ) = 40pF Energy losses include "tail" and diode reverse recovery. T j = 15 0 C V C C = 4 00V, I C = 15A, V G E = 0/ 1 5V , R G = 23 1) L = 60nH, C 1 ) = 40pF Energy losses include "tail" and diode reverse recovery. 11 6 72 26 0.38 0.20 0.58 12 15 235 17 0.48 0.30 0.78 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to test circuit in Figure E. 3 Rev 2.1 Jan 05
Power Semiconductors
SGB15N60HS
^
tP=5s
60A
8s
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 10Hz
IC, COLLECTOR CURRENT
TC=80C
15s 10A 50s 200s 1A 1ms
TC=110C
Ic
Ic
0,1A 1V
DC
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
140W 120W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
100W 80W 60W 40W 20W 0W 25C
20A
10A
Ptot,
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev 2.1
Jan 05
SGB15N60HS
^
40A
VGE=20V 15V
40A
VGE=20V 15V
IC, COLLECTOR CURRENT
30A
13V 11V 9V
IC, COLLECTOR CURRENT
30A
13V 11V 9V
20A
7V 5V
20A
7V 5V
10A
10A
0A 0V 2V 4V 6V
0A 0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
T J=-55C 40A 25C 150C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C IC=7.5A IC=15A IC=30A
IC, COLLECTOR CURRENT
20A
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev 2.1
Jan 05
SGB15N60HS
^
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
tf
100 ns td(off) tf td(on) 10 ns tr
10ns
td(on) tr
1ns
0A
10A
20A
1 ns
0
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
5,0V 4,5V max. 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50C min. typ.
t, SWITCHING TIMES
100ns
tf tr td(on) 0C 50C 100C 150C
10ns
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=15A, RG=23, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA)
Power Semiconductors
6
Rev 2.1
Jan 05
SGB15N60HS
^
*) Eon include losses due to diode recovery
*) Eon include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2,0mJ Ets*
Ets* 1,0 mJ
Eon* 1,0mJ
Eon* 0,5 mJ Eoff
Eoff
0,0mJ
0A
10A
20A
30A
0,0 mJ
0
10
20
30
40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
*) E on include losses due to diode recovery
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0.75mJ
0.1 0.05 0.02
0.50mJ
Ets*
10 K/W
-2
0.01
R,(1/W) 0.5321 0.2047 0.1304 0.0027
R1
, (s) 0.04968 -3 2.58*10 -4 2.54*10 -4 3.06*10
R2
Eon* 0.25mJ Eoff
10 K/W single pulse
C 1 = 1 /R 1 C 2 = 2 /R 2
-3
0.00mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1m s
10m s
100m s
1s
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=23, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
7
Rev 2.1
Jan 05
SGB15N60HS
^
15V
VGE, GATE-EMITTER VOLTAGE
1nF
Ciss
10V
120V
480V
c, CAPACITANCE
100pF
Coss Crss
5V
0V
0nC
20nC
40nC
60nC
80nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
10V 11V 12V 13V 14V
SHORT CIRCUIT WITHSTAND TIME
250A
15s
200A
10s
150A
100A
5s
tSC,
50A
0s
0A
10V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
Power Semiconductors
8
Rev 2.1
Jan 05
SGB15N60HS
^
TO-263AB (D2Pak) P-TO263-3-2
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 min 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40
[inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157
A B C D E F G H K L M N P Q R S T U V W X Y Z
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
9
Rev 2.1
Jan 05
SGB15N60HS
^
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH and Stray capacity C =40pF.
Published by
Power Semiconductors
10
Rev 2.1
Jan 05
SGB15N60HS
^
Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
11
Rev 2.1
Jan 05

▲Up To Search▲

Price & Availability of SGB15N60HS

	To Download SGB15N60HS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .